28. Dislocation engineered silicon light emitting devices
Thin Solid Films 515 (22): 8113-8117 AUG 15 2007
Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP
27. Stoichiometric SiO2 thin films deposited by reactive sputtering
MATERIALS CHEMISTRY AND PHYSICS 104 (1): 172-176 JUL 15 2007
Radovic I, Serruys Y, Limoge Y, Bibic N, Poissonnet S, Jaoul O, Mitric M, Romcevic M, Milosavljevic M
26. Interface mixing of Fe/Si bilayers by noble-gas ions: Are there effects of the ionic charge state?
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 257: 605-608 APR 2007
Milinovic V, Bibic N, Lieb KP, Milosavljevic M, Schrempel F
25. Ion implantation induced structural changes in reactively sputtered Cr-N layers on Si substrates
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B- BEAM INTERACTIONS WITH MATERIALS AND ATOMS 257: 782-785 APR 2007
Novakovic M, Popovic M, Perusko D, Milinovic V, Bibic N, Mitric M, Milosavljevic M
24. Enhanced interface mixing of Fe/Si bilayers on preamorphized silicon substrates
Appl. Phys. Lett. 90 (5): Art. No. 051901 JAN 29 2007
Bibic N, Milinovic V, Lieb KP, Milosavljevic M, Schrempel F
23. Optimising dislocation-engineered silicon light-emitting diodes
Appl. Phys. B-Lasers and Optics 83 (2): 289-294 MAY 2006
Milosavljevic M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP
22. Boron engineered dislocation loops for efficient room temperature silicon light emitting diodes
Thin Solid Films 504 (1-2): 36-40 MAY 10 2006
Lourenco MA, Milosavljevic M, Shao G, Gwilliam RM, Homewood KP
21. Suppression of boron interstitial clusters in SOI using vacancy engineering
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 124: 210-214 Sp. Iss. SI, DEC 5 2005
Smith AJ, Colombeau B, Gwilliam R, Cowern NEB, Sealy BY, Milosavljevic M, Collart E, Gennaro S, Bersani M, Barozzi M
20. Dislocation engineering for Si-based light emitting diodes
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 124: 86-92 Sp. Iss. SI, DEC 5 2005
Gwilliam R, Lourenco MA, Milosavljevic M, Homewood KP, Shao G
19. Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature
J. Appl. Phys. 98 (12): Art. No. 123506 DEC 15 2005
Milosavljevic M, Shao G, Lourenco MA, Gwilliam RM, Homewood KP, Edwards SP, Valizadeh R, Colligon JS
18. On the role of dislocation loops in silicon light emitting diodes
Appl. Phys. Lett. 87 (20): Art. No. 201105 NOV 14 2005
Lourenco MA, Milosavljevic M, Gwilliam RM, Homewood KP, Shao G
17. Engineering of boron-induced dislocation loops for efficient room-temperature silicon light-emitting diodes
J. Appl. Phys. 97 (7): Art. No. 073512 APR 1 2005
Milosavljevic M, Shao G, Lourenco MA, Gwilliam RM, Homewood KP
16. Semiconducting amorphous FeSi2 layers synthesized by co-sputter deposition
Thin Solid Films 461 (1): 72-76 AUG 2 2004
Milosavljevic M, Shao G, Gwilliam RM, Gao Y, Lourenco MA, Valizadeh R, Colligon JS, Homewood KP
15. Experimental and theoretical study of the electroluminescence temperature dependence of iron disilicide light-emitting devices
Thin Solid Films 461 (1): 219-222 AUG 2 2004
Lourenco MA, Milosavljevic M, Gwilliam RM, Shao G, Homewood KP
14. Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions
Thin Solid Films 459 (1-2): 23-27 JUL 1 2004
Bibic N, Milinovic V, Dhar S, Lieb KP, Milosavljevic M, Siljegovic M, Perusko D, Schaaf P
13. Ion - beam mixing in Fe/Si bilayers by singly and highly charged ions: evolution of phases, spike mechanism and possible effects of the ion - charge
Appl. Phys. A 76 (5) (2003) 773-780
Dhar S, Schaaff P, Bibic N, Hooker E, Milosavljevic M, Lieb KP
12. Ion beam mixing in Fe/Si and Ta/Si bilayers: possible effects of ion charge
Nuclear Instruments and Methods B 205 (2003) 741-745
Dhar S, Schaaf P, Lieb KP, Bibic N, Milosavljevic M, Sajavaara T, Keinonen J, Traverse A
11. Structural and optical properties of b -FeSi 2 layers grown by ion beam mixing
Surface and Coatings Technology 158-159 (2002) 198-202
N.Bibic, S.Dhar, P.Schaaf, M.Milosavljevic , K.P.Lieb, Y-L.Huang, M.Seibt, C.McKinty and K.P.Homewood
10. Sinthesys of amorphous FeSi 2 by ion beam mixing
Nuclear Instruments and Methods B 188 (2002) 166-169
M.Milosavljevic , G.Shao, N.Bibic, C.N.McKinty, C.Jeynes and K.P.Homewood
9. Atomic mixing and interface reactions in Ta/Si bilayers during noble-gas ion irradiation
Phys. Rev. B vol 65 no 2 (2002) 024109-1-7
S. Dhar, M.Milosavljevic , N.Bibic and K.P.Lieb
8. Properties of b -FeSi 2 grown by combined ion radiation and annealing of Fe/Si bilayers
Nuclear Instruments and Methods B 175-177 (2001) 309-313
M.Milosavljevic , G.Shao, R.M.Gwilliam, C.Jeynes, C.N.McKinty and K.P.Homewood
7. Synthesizing single-phase b -FeSi 2 via ion beam irradiations of OF Fe/Si bilayers
Nuclear Instruments and Methods B 178 (1-4) (2001) 229-232
M.Milosavljevic , S.Dhar, P.Schaaf, N.Bibic and K.P.Lieb
6. Amorphous - iron disicilide: a promising semiconductor
Appl. Phys. Lett. 79 (2001) 1438-1440
M.Milosavljevic , G.Shao, N.Bibic, C.N.McKinty, C.Jeynes and K.P.Homewood
5. Growth of b -FeSi 2 films via noble-gas ion-beam mixing of Fe/Si bilayers
J. Appl. Phys. 90 (2001) 4474-4484
M.Milosavljevic , S.Dhar, P.Schaaf, N.Bibic, Y-L. Huang, M.Seibt and K.P.Lieb
4. Interface mixing in Ta/Si bilayers with Ar ions
Nuclear Instruments and Methods B 161-163 (2000) 1015-1019
N. Bibic, S. Dhar, M. Milosavljevic, K. Removic, L. Rissanen, K. P. Lieb
3. Direct synthesis of b - FeSi 2 by ion mixing of Fe/Si bilayers
Appl. Phys. A 71 (2000) 43-45
M.Milosavljevic, S.Dhar, P.Schaaf, N.Bibic, M.Han and K.P.Lieb
2. The L3A facility at the Vinca Institute - surface modification of materials by heavy ion beams from an ECR ion source
Review of Scientific Instruments 71 (2000) 768-770
A.Dobrosavljevic, M.Milosavljevic, N.Bibic and A.Efremov
1. Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers
Phys. Stat. Sol. (b) 222 (2000) 295-302
S.Dhar, M.Milosavljevic, N.Bibic and K.P.Lieb
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